| PART |
Description |
Maker |
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)
3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
|
| W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
From old datasheet system
128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM）的
128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| TC55V1664BJ-12 TC55V1664BFT-10 |
64K Word x 16 Bit CMOS Static RAM(64Kx 16 CMOS 静RAM)
64K Word x 16 Bit CMOS Static RAM(64K瀛?x 16 浣?CMOS ???RAM)
|
Toshiba Corporation
|
| S71JL064HA0 |
Stacked Multi-chip Product (MCP) Flash Memory And Psram CMOS 3.0Volt-only, Simultaneous Operation Flash Memories And Static RAM/pseudo-static RAM
|
AMD
SPANSION
|
| CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions
8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8,192字8位高速CMOS静态RAM
|
http://
SONY[Sony Corporation]
|
